pISSN: 1976-4251
eISSN: 2233-4998
HOME
LOG IN
REGISTER
 
About the Journal
Editorial Committee
Information for Authors
 
Authors
Reviewers
Associated Editors
Editor
Editor-in-Chief(Overview)
Editorial Office
 
Current Issues
Article In Press
Search for Archives
Subject   Keyword   Abstract   Author  
 

CARBONLETT, vol. 27, no. 1, pp.1-11, 2018

DOI: http://dx.doi.org/ DOI:10.5714/CL.2018.27.001

Substitutional boron doping of carbon materials

Sumin Ha1, Go Bong Choi1, Seungki Hong1,2, Doo Won Kim2 and Yoong Ahm Kim1,3,♠

Affiliation: 1Department of Polymer Engineering, Graduate School, School of Polymer Science and Engineering & Alan G. MacDiarmid Energy Research Institute, Chonnam National University, Gwangju 61186, Korea
2Institute of Advanced Composite Materials, Korea Institute of Science and Technology, Jeonbuk 55324, Korea
3Institute for Biomedical Sciences, Interdisciplinary Cluster for Cutting Edge Research, Shinshu University, Matsumoto 390-8621, Japan

Abstract: A simple, but effective means of tailoring the physical and chemical properties of carbon materials should be secured. In this sense, chemical doping by incorporating boron or nitrogen into carbon materials has been examined as a powerful tool which provides distinctive advantages over exohedral doping. In this paper, we review recent results pertaining methods by which to introduce boron atoms into the sp2 carbon lattice by means of high-temperature thermal diffusion, the properties induced by boron doping, and promising applications of this type of doping. We envisage that intrinsic boron doping will accelerate both scientific and industrial developments in the area of carbon science and technology in the future.


Keyword: boron atom, substitution, Raman, p-type doping, active site